My understanding is that for weak localization the presence of weak disorder leads to some electron paths interfering destructively since there is an equal probability for it to take one complete "circle" in one direction to taking the same path in the opposite direction so the phases cancel, resulting in fewer electrons diffusing all the way through the material and hence we would measure an increase in resistivity. The last bit is the part I don't get, I would have thought that if the two paths interfere destructively then surely the resistivity would increase? What does the spin-orbit coupling change, since that seems to be the only difference between antilocalization and localization which seem to result in two opposite effects on the resistivity. (Phys Rev B 100:125162, 2019), which assumes infinite phase coherence length (l ) and a zero spin-orbit scattering length (l SO), the present framework is more general, covering high T and the intermediate spin-orbit coupling strength. Because of this, the two paths any loop interfere destructively which leads to a lower net resistivity. Meanwhile, as the temperature decreases, the temperature dependence of phase coherence length gradually changes from lT1 to lT0.5, suggesting that the. Compared to the previous approach Vu et al. The spin of the carrier rotates as it goes around a self-intersecting path, and the direction of this rotation is opposite for the two directions about the loop. Universal conductance fluctuations and the weak antilocalization effect are defect structure specific fingerprints in the magnetoconductance that are caused. In the quantum diffusive regime, where l/l 1, electrons conserve the phase coherence even after. Thus, the ratio of l/l divides classical and quantum diffusive regimes. The phase coherence is usually destroyed by inelastic scattering between electron and phonon or between electrons. In a system with spin-orbit coupling the spin of a carrier is coupled to its momentum. over which an electron can maintain its phase coherence. These results enrich the fundamental understanding of electronic transport properties of InSe.On Wikipedia (pretty much the only place I can find an explanation of what weak anti-localization actually is) it is explained as: This is consistent with our previous results Berger2006 and provides additional support for Eq. The coherence time is proportional to the inverse temperature, which, in 2D, is an indication that the dominant phase-breaking mechanism is e-e scattering. The maximum phase-coherence length is found to be 320 nm at 1.7 K, larger than that of monolayer Mo S 2 and few-layer black phosphorus. phase coherence Quantum transport properties with weak antilocalization observed in tetragonal CsSnI 3 Demonstration of quasi-2d charge carrier behavior with of spin-orbit coupling Epitaxial halide perovskites emerging materials for quantum electronic applications Nasyedkin et al., iScience24, 102912 August 20, 2021ª 2021 The Author(s). Magnetoresistance measurements performed on a reactively DC-sputtered thin film at low temperatures (T < 8 K) suggest a 2D weak antilocalization. The temperature dependence of the phase coherence time is plotted in Fig. The conductivity and temperature dependence of phase-coherence length reveal that the electron-electron ( e − e) interactions are dominated dephasing mechanism for electronic transport in γ-InSe at low temperatures. We find that the magnetotransport data agree well with the Hikami-Larkin-Nagaoka theory. We find that the magnetotransport data agree well with the Hikami-Larkin-Nagaoka theory. We observe a gate-tunable weak antilocalization behavior at lower magnetic field B, which shows a transition to weak localization at higher B region. We observe a gate-tunable weak antilocalization behavior at lower magnetic field B, which shows a transition to weak localization at higher B region. Here we report the gate voltage and temperature-dependent magnetotransport properties of γ-InSe transistor devices with Hall mobility up to 2455 c m 2 V − 1 s − 1 at the temperature of 1.7 K. The weak antilocalization always dominates the magnetoconductivity near zero field, thus gives one of the transport signatures for Weyl semimetals. However, the underlying transport mechanism of carriers in thin InSe at low temperatures remains unknown. Lastly, all the transport properties in thin ZrTe. 2019), which assumes infinite phase coherence length (l) and a zero spinorbit. Meanwhile, universal conductance fluctuations have temperature and gate voltage dependence that is similar to that of the phase coherence length. The present study develops a general framework for weak antilocalization (WAL) in a three-dimensional. Indium selenide (InSe) has attracted tremendous research interest due to its high mobility and potential applications in next-generation electronics. temperature-dependent phase coherence length extracted from weak anti-localization agrees with strong electron-electron scattering in the sample.
0 Comments
Leave a Reply. |
AuthorWrite something about yourself. No need to be fancy, just an overview. ArchivesCategories |